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NPN Plastic Encapsulated Transistor 2SC2274 Low Frequency Power Amp Applications

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NPN Plastic Encapsulated Transistor 2SC2274 Low Frequency Power Amp Applications

Brand Name : Anterwell

Model Number : 2SC2274

Certification : new & original

Place of Origin : original factory

MOQ : 20

Price : Negotiation

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000

Delivery Time : 1 day

Packaging Details : Please contact me for details

High Breakdown Voltage : Vceo>=50/80V

High Current : Ic=500mA

Collector to Base Voltage : 60V

Collector Power Dissipation : 600mW

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NPN Plastic Encapsulated TransistorNPN Plastic Encapsulated Transistor 2SC2274 Low Frequency Power Amp Applications

2SC2274

 
 

FEATURES

* High Breakdown Voltage                                                            

* High Current                    

* Low Saturation Voltage

 

 

 

CLASSIFICATION OF hFE(1)

Product-Rank 2SC2274-D 2SC2274-E 2SC2274-F
  Range   60~120   100~200   160~320

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

   Parameter            Symbol         Rating        Unit
 Collector to Base Voltage             VCBO            60         V
 Collector to Emitter Voltage              VCEO             50         V
 Emitter to Base Voltage              VEBO              5         V
 Collector Current - Continuous               IC             0.5         A
 Collector Power Dissipation               PC            600        mW
 Thermal Resistance From Junction To Ambient               RθJA            208      °C / W
 Junction, Storage Temperature               TJ, TSTG      150, -55~150          °C

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

  Parameter   Symbol   Min.  Typ.   Max. Unit    Test Conditions
Collector to Base Breakdown Voltage  V(BR)CBO  60

  --

   --   V  IC=0.01mA, IE=0
Collector to Emitter Breakdown Voltage  V(BR)CEO   50    --    --   V  IC=1mA, IB=0
Emitter to Base Breakdown Voltage  V(BR)EBO    5    --    --   V  IE=0.01mA, IC=0
Collector Cut – Off Current   ICBO    --    --    1   μA  VCB=40V, IE=0
Emitter Cut – Off Current   IEBO    --    --    1   μA  VEB=4V, IC=0
DC Current Gain

  hFE(1)

  hFE(2)

  60

  35

   --

   --

  320

   --

 

 VCE=5V, IC=50mA

 VCE=5V, IC=400mA

Collector to Emitter Saturation Voltage   VCE(sat)    --    --   0.6   V  IC=400mA, IB=40mA
Base to Emitter voltage   VBE(sat)    --    --   1.2   V  IC=400mA, IB=40mA
Transition Frequency    fT    --   120    --   MHz  VCE=10V, IC=10mA
Collector Output Capacitance    Cob    --    5    --    pF  VCB=10V, f=1MHz

 

 

 

 

 

 


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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