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Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

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Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

Brand Name : Anterwell

Model Number : 2SD1290

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8000

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector-base voltage : 1500V

Emitter-base voltage : 5V

Collector power dissipation : 50W

Junction temperature : 130℃

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Silicon High voltage general purpose npn transistor 2SD1290 Built in damper diode

 

DESCRIPTION

Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

·With TO-3PN package

·Built-in damper diode

·High voltage ,high reliability

·Wide area of safe operation

 

APPLICATIONS

·For color TV horizontal deflection

  output applications

 

PINNING

      PIN       DESCRIPTION
       1     Base
       2

    Collector;connected to         mounting base

       3     Emitter

 

 

 

Absolute maximum ratings (Ta=25℃)

 SYMBOL        PARAMETER            CONDITIONS    VALUE    UNIT
   VCBO   Collector-base voltage    Open emitter    1500      V
   VEBO   Emitter-base voltage    Open collector      5      V
    IC   Collector current (DC)        3      A
    ICM   Collector current (Pulse)       10      A
    PC   Collector power dissipation    TC=25℃      50      W
    Tj   Junction temperature       130      ℃
    Tstg   Storage temperature     -55~130      ℃

 

 

CHARACTERISTICS Tj=25℃ unless otherwise specified

 SYMBOL          PARAMETER         CONDITIONS   MIN.   TYP.   MAX.   UNIT
 V(BR)EBO  Emitter-base breakdown voltage  IE=500mA; IC=0     5         V
 VCEsat  Collector-emitter saturation voltage  IC=2A; IB=0.75A         5.0     V
 VBEsat  Base-emitter saturation voltage  IC=2A; IB=0.75A          1.5     V
 ICBO  Collector cut-off current

 VCB=750V; IE=0

 VCB=1500V; IE=0

   

     50

      1

   μA

   mA

 hFE  DC current gain  IC=2A ; VCE=10V      3         8  
 ts  Storage time IC=2A ILeak=0.75A,LB=5μH      3         7     μs
 tf  Fall time           1     μs
 VF  Diode forward voltage  IF=-4A,IB=0          2.2      V

 

 

PACKAGE OUTLINE

Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

 


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multi emitter transistor

      
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