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MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

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MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

Brand Name : Anterwell

Model Number : MSA-1105-TR1

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Device Current : 80 mA

Power Dissipation : 550 mW

RF Input Power : +13 dBm

Junction Temperature : 150°C

Storage Temperature : –65 to 150°C

Device Voltage Temperature Coefficient : -8.0 mV/°C

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Cascadable Silicon Bipolar MMIC Amplifier MSA-1105

 

Features

• High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block

• 3 dB Bandwidth: 50 MHz to 1.3 GHz

• 17.5 dBm Typical P1 dB at 0.5 GHz

• 3.6 dB Typical Noise Figure at 0.5 GHz

• Surface Mount Plastic Package

• Tape-and-Reel Packaging Option Available[1]


Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”

 

Description

The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.

 

The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

 

Typical Biasing Configuration

 

MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

 

05 Plastic Package

MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

 

MSA-1105 Absolute Maximum Ratings

Parameter Absolute Maximum[1]
Device Current 80 mA
Power Dissipation[2,3] 550 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C

 

Thermal Resistance[2,4]: θjc = 125°C/W


Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 8 mW/°C for TC > 124°C.

4. See MEASUREMENTS section “Thermal Resistance” for more information.

 

05 Plastic Package Dimensions

MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

 

 

 

 

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Product Tags:

electronic integrated circuit

      

linear integrated circuits

      
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