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NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

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NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

Name: NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : 2SC5200

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector-Base Voltage : 230 V

Collector-Emitter Voltage : 230 V

Emitter-Base Voltage : 5 V

Collector Current(DC) : 15 A

Base Current : 1.5 A

Junction and Storage Temperature : - 50 ~ +150 °C

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2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications

• High-Fidelity Audio Output Amplifier NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol	Parameter	Ratings	Units
BV_CBO	Collector-Base Voltage	230	V
BV_CEO	Collector-Emitter Voltage	230	V
BV_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current(DC)	15	A
I_B	Base Current	1.5	A
P_D	Total Device Dissipation(T_C=25°C) Derate above 25°C	150 1.04	W W/°C
T_J, T_STG	Junction and Storage Temperature	- 50 ~ +150	°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol	Parameter	Max	Units
R_θJC	Thermal Resistance, Junction to Case	0.83	°C/W

* Device mounted on minimum pad size

hFE Classification

Classification	R	O
h_FE1	55 ~ 110	80 ~ 160

Typical Characteristics

NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

Package Dimensions

NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

Product Tags:

npn smd transistor

multi emitter transistor

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