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2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

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2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

Brand Name : Anterwell

Model Number : 2SK2996

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Gate leakage current : ±10 μA

Gate−source breakdown voltage : ±30 V

Drain cut−off current : 100 μA

Drain−source breakdown voltage : 600 V

Gate threshold voltage : 2.0 to 4.0 V

Drain−source ON resistance : 0.74 Ω

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(π−MOSV) 2SK2996

 

DC−DC Converter, Relay Drive and Motor Drive Applications

 

Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)

High forward transfer admittance : |Yfs| = 6.8 S (typ.)

Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)

Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain−source voltage VDSS 600 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 10 A
Pulse (Note 1) IDP 30
Drain power dissipation (Tc = 25°C) PD 45 W
Single pulse avalanche energy (Note 2) EAS 252 mJ
Avalanche current IAR 10 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C

 

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

   Weight: 1.9 g (typ.)

 

 

 


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