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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Brand Name : IXYS

Model Number : IXFH60N50P3

Certification : Original Factory Pack

Place of Origin : Philippines

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 20000

Delivery Time : 1

Packaging Details : please contact me for details

IXFQ : TO-3P

IXFH : TO-247

Features : Fast Intrinsic Rectifier ,Avalanche Rated ,Low RDS(ON) and QG

Advantages : z High Power Density z Easy to Mount z Space Savings

Applications : Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives

Weight : TO-268 4.0 g TO-3P 5.5 g TO-247 6.0 g

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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

 

 

Polar3TM HiperFETTM                              IXFT60N50P3  VDSS = 500V

Power MOSFET                                       IXFQ60N50P3   I D25 = 60A

                                                                                                IXFH60N50P3   RDS(on) ≤ 100mΩ

 

 

N-Channel Enhancement Mode Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Avalanche Rated

Fast Intrinsic Rectifier

 

 

 

 

 

 

 

 

Symbol Test Conditions  Maximum Ratings

VDSS 

VDGR

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGS = 1MΩ

500 V

500 V

VGSS 

VGSM 

Continuous 

Transient 

± 30 V

± 40 V

I  D25

I DM
 

TC = 25°C 

TC = 25°C, Pulse Width Limited by TJM

60 A

150 A

I A 

EAS

TC = 25°C  

TC = 25°C

30 A

1 J

dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
PD  TC = 25°C  1040 W

TJ

TJM 

Tstg

 

-55 ... +150 °C

150 °C

-55 ... +150 °C

 TL

Tsold 

1.6mm (0.062in.) from Case for 10s 

Plastic Body for 10 seconds

300 °C

260 °C

Md  Mounting Torque (TO-247 & TO-3P)  1.13 / 10 Nm/lb.in.
Weight

TO-268

TO-3P 

TO-247 

4.0 g

5.5 g

6.0 g

 

 

Features                                           Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Fast Intrinsic Rectifier

Avalanche Rated

 Low RDS(ON) and QG

 Low Package Inductance

 

Advantages

 High Power Density

 Easy to Mount

 Space Savings

 

Applications

 Switch-Mode and Resonant-Mode Power Supplies

 DC-DC Converters z Laser Drivers

 AC and DC Motor Drives

 Robotics and Servo Controls

 

 

 

Fig. 1. Output Characteristics @ TJ = 25ºC    Fig. 2. Extended Output Characteristics @ TJ = 25ºC

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

 

Fig. 3. Output Characteristics @ TJ = 125ºC        Fig. 4. RDS(on) Normalized to ID = 30A Value vs.                                                                                                                  Junction    Temperature

 

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Fig. 5. RDS(on) Normalized to ID = 30A Value vs.      6. Maximum Drain Current vs. Case                                   Drain CurrentFig.                                                            Temperature

 

                    Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

 

          Fig. 7. Input Admittance                                                        Fig. 8. Transconductance

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

 

 


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